SS29 & SS210
Vishay General Semiconductor
High Voltage Surface Mount Schottky Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
V
F
T
j
max.
2.0 A
90 V, 100 V
75 A
0.71 V
150 °C
DO-214AA (SMB)
Features
•
•
•
•
•
•
•
•
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case:
DO-214AA (SMB)
Epoxy meets UL 94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
Color band denotes the cathode end
Maximum Ratings
T
A
= 25 °C unless otherwise specified#
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 90 °C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2 µs, 1 KHz
Voltage rate of change (rated V
R
)
Storage temperature range
Maximum operating junction temperature
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
RRM
dv/dt
T
STG
T
J
Symbol
SS29
S9
90
63
90
1.5
75
1.0
10000
- 55 to + 150
115
SS210
S10
100
70
100
V
V
V
A
A
A
V/µs
°C
°C
Unit
Document Number 88749
24-Oct-05
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SS29 & SS210
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified#
Parameter
Maximum instantaneous forward
voltage at:
(1)
Test condition
I
F
= 0.1 A,
I
F
= 1.0 A,
I
F
= 3.0 A,
I
F
= 1.5 A,
I
F
= 3.0 A,
T
A
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
Symbols
V
F
SS29
0.43
0.75
0.95
0.71
0.85
30
5
SS210
Units
V
Maximum DC reverse current at
rated DC blocking voltage
(1)
I
R
µA
mA
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum thermal resistance
(1)
Notes:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Symbol
R
θJA
R
θJL
SS29
75
17
SS210
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
1.5
Resistive or Inductive Load
100
8.3
ms Single Half Sine-Wave
Peak Forward Surge Current (A)
90
100
110
120
Average Forward Current (A)
80
1.0
60
40
0.5
P.C.B. Mounted On
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
20
0
50
60
70
80
0
1
10
100
Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88749
24-Oct-05
SS29 & SS210
Vishay General Semiconductor
20
10000
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
T
J
= 150 °C
1000
T
J
= 100 °C
100
T
J
= 125 °C
T
J
= 150 °C
10
T
J
= 125 °C
1
T
J
= 25 °C
0.1
T
J
= 100 °C
10
T
J
= 25 °C
1.0
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
20
30
40
50
60
70
80
90
100
Instantaneous Forward
Voltage
(V)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Current Characteristics
Package outline dimensions in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 MAX.
(2.159 MAX.)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 MIN.
(2.18 MIN.)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 MIN.
(1.52 MIN.)
0.220 REF
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number 88749
24-Oct-05
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