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RJK6034DPP-E0T2

Description
600V - 1A - MOS FET High Speed Power Switching
File Size101KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK6034DPP-E0T2 Overview

600V - 1A - MOS FET High Speed Power Switching

Preliminary
Datasheet
RJK6034DPP-E0
600V - 1A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 9.8
typ. (at I
D
= 0.5 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0615EJ0100
Rev.1.00
Feb 12, 2013
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D Note3
I
D (pulse) Note1
I
DR
I
DR (pulse)Note1
Pch
Note2
ch-c
Tch
Tstg
Ratings
600
30
1
2
1
2
21.1
5.92
150
–55 to +150
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0615EJ0100 Rev.1.00
Feb 12, 2013
Page 1 of 6

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