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IRFR210BTM

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size655KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

IRFR210BTM Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IRFR210BTM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Objectid2069148948
Reach Compliance Codecompliant
ECCN codeEAR99
compound_id167714282
ConfigurationSingle
Maximum drain current (Abs) (ID)2.7 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)26 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
IRFR210B / IRFU210B
November 2001
IRFR210B / IRFU210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
2.7A, 200V, R
DS(on)
= 1.5Ω @V
GS
= 10 V
Low gate charge ( typical 7.2 nC)
Low Crss ( typical 6.8 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
G
S
D-PAK
IRFR Series
I-PAK
G D S
IRFU Series
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
IRFR210B / IRFU210B
200
2.7
1.7
10
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
40
2.7
2.6
5.5
2.5
26
0.2
-55 to +150
300
T
J
, T
stg
T
L
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
4.9
50
110
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

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IRFR210BTM IRFU210BTU
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Reach Compliance Code compliant compliant
Configuration Single Single
Maximum drain current (Abs) (ID) 2.7 A 2.7 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 26 W 26 W
surface mount YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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