U630H04D1C45 datasheet, PDF - EEWORLD Datasheet

U630H04D1C45: Description512X8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28; Categorystorage storage; File Size212KB，14 Pages; ManufacturerCypress Semiconductor

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U630H04D1C45 Overview

512X8 NON-VOLATILE SRAM, 45ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	45 ns
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	37.1 mm
memory density	4096 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	512 words
character code	512
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512X8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.1 mm
Maximum standby current	0.001 A
Maximum slew rate	0.075 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm

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