DATA SHEET
SEMICONDUCTOR
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULT RA FAST RECTI FIERS FORWARD CURRENT - 2.0 Ampere
FEATURES
•
Glass passivated chip
•
Ultra fast switching for high efficiency
•
For surface mounted applications
•
Low forward voltage drop and high current capability
•
Low reverse leakage current
•
Plastic material has UL flammability classification 94V-0
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
UF2A~UF2M
SMB/DO-214AA
Unit:inch(mm)
MECHANICAL DATA
•
Case : Molded plastic
•
Polarity : Indicated by cathode band
•
Weight : 0.003 ounces, 0.093 grams
.050(1.27)
.030(0.76)
.
096(2.44)
.083(2.13)
.012(.31)
.006(.15)
.008(.203)
.002(.051)
.220(5.59)
.200(5.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak For ward Surge Current
8.3ms single ha lf sine- wave
super imposed on rated l oad (JEDEC METHOD)
Maxi mum f orward Voltage at 1.0A DC
Maxi mum DC Reverse Cur rent
at Rated DC Blocking Voltage
@TJ =25
°C
@TJ =100
°C
@TL =75
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
UF2A
50
35
50
UF2B
100
70
100
UF2D
200
140
200
UF2G
400
280
400
2.0
UF2J
600
420
600
UF2K
800
560
800
UF2M
1000
700
1000
UNIT
V
V
V
A
I
FSM
50
A
V
F
I
R
T
RR
C
J
R
θJL
T
J
T
STG
1.0
1.3
5
100
50
20
30
-55 to +150
-55 to +150
1.5
1.7
V
uA
Maximum Reverse Recovery Time (Note 1)
Typi cal Junction
Capacitance (Note 2)
Typical Thermal Resistance (Note 3 )
Operati ng Temperature Range
Storage Temperature Range
75
10
ns
pF
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
http://www.yeashin.com
1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF2A~UF2M
NSTANTANEOUS FORWARD CURRENT,
AMPERES
10
TJ = 25
°C
PULSE WIDTH = 300us
2% DUTY CYCLE
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
2.4
2.0
1.6
SINGLE PHASE HALF
1.2
WAVE 60Hz RESISTIVE
OR INDUCTIVE LOAD
0.8
P.C.B. MOUNTED ON
0.3×0.3"(8.0×8.0mm)
0.4
COPPER PAD AREAS
0
0
20
40
60
80
1.0
UF2A
0.1
UF2G
UF2K
.01
0
.4
.6
8
1.0
1.2
1.4
100
120
140
160
LEAD TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig. 1-DERATING CURVE FOR OUTPUT RECTIFIED
CURRENT
Fig. 2-TYPICAL FORWARD CHARACTERISTICS
PER ELEMENT
10
PEAK FORWARD SURGE CURRENT,
AMPERES
30
25
20
15
10
5
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
INSTANTANEOUS REVERSE CURRENT
MICROAMPERES
1.0
TJ = 25
°C
0.1
.01
1
2
5
10
20
50
100
0
20
40
60
80
100 120
140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig. 3-MAXIMUM FORWARD SURGE CURRENT
100
CAPACITANCE, pF
Fig. 4-TYPICAL REVERSE CHARACTERISTICS
t
rr
+0.5A
0
-0.25
10
5
1.0
10
REVERSE VOLTAGE, VOLTS
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
100
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 5-TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
Fig. 6-REVERSE RECOVERY TIME CHARACTERISTIC
AND TEST CIRCUIT DIAGRAM
http://www.yeashin.com
2
REV.02 20110725
京公网安备 11010802033920号
EEWORLD
