ST333C04CDN1LPBF datasheet, PDF

ST333C04CDN1LPBF: DescriptionSilicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3; CategoryAnalog mixed-signal IC Trigger device; File Size172KB，9 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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ST333C04CDN1LPBF Overview

Silicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	BUTTON
package instruction	DISK BUTTON, O-CEDB-N2
Contacts	2
Reach Compliance Code	compliant
Other features	HIGH SPEED
Shell connection	ISOLATED
Nominal circuit commutation break time	10 µs
Configuration	SINGLE
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
JEDEC-95 code	TO-200AB
JESD-30 code	O-CEDB-N2
Maximum leakage current	50 mA
On-state non-repetitive peak current	11500 A
Number of components	1
Number of terminals	2
Maximum on-state current	720000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum rms on-state current	1435 A
Maximum repetitive peak off-state leakage current	50000 µA
Off-state repetitive peak voltage	400 V
Repeated peak reverse voltage	400 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	40
Trigger device type	SCR

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