2N7330D datasheet, PDF - EEWORLD Datasheet

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2N7330D: DescriptionPower Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE; CategoryDiscrete semiconductor The transistor; File Size40KB，4 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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2N7330D Overview

Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

2N7330D Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	26 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	300 W
Maximum pulsed drain current (IDM)	78 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Maximum off time (toff)	1200 ns
Maximum opening time (tons)	950 ns
Base Number Matches	1

2N7330D Related Products

	2N7330D	2N7330H	2N7330R
Description	Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE	Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE	Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Other features	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	26 A	26 A	26 A
Maximum drain-source on-resistance	0.2 Ω	0.2 Ω	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE	TO-204AE	TO-204AE
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Number of terminals	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power consumption environment	300 W	300 W	300 W
Maximum pulsed drain current (IDM)	78 A	78 A	78 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	1200 ns	1200 ns	1200 ns
Maximum opening time (tons)	950 ns	950 ns	950 ns
Base Number Matches	1	1	1
Is it Rohs certified?	-	incompatible	incompatible
Maximum drain current (Abs) (ID)	-	26 A	26 A
JESD-609 code	-	e0	e0
Maximum power dissipation(Abs)	-	150 W	150 W
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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