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HY51V65164LRC-70

Description
EDO DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50
Categorystorage    storage   
File Size265KB,8 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY51V65164LRC-70 Overview

EDO DRAM, 4MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, REVERSE, TSOP2-50

HY51V65164LRC-70 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeTSOP2
package instructionTSOP2-R,
Contacts50
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-G50
JESD-609 codee6
length20.95 mm
memory density67108864 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals50
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2-R
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm

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