Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Parts packaging code | TO-220AB |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 3 A |
Collector-emitter maximum voltage | 60 V |
Configuration | Single |
Minimum DC current gain (hFE) | 30 |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 140 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 25 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 0.07 MHz |
Base Number Matches | 1 |
2SD366 | 2N389 | |
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Description | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-53, Metal, 3 Pin, TO-53, 3 PIN |
Parts packaging code | TO-220AB | TO-53 |
package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, O-MUFM-X3 |
Contacts | 3 | 3 |
Reach Compliance Code | unknow | unknow |
ECCN code | EAR99 | EAR99 |
Maximum collector current (IC) | 3 A | 3 A |
Collector-emitter maximum voltage | 60 V | 60 V |
Configuration | Single | Single |
Minimum DC current gain (hFE) | 30 | 12 |
JEDEC-95 code | TO-220AB | TO-53 |
JESD-30 code | R-PSFM-T3 | O-MUFM-X3 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Maximum operating temperature | 140 °C | 175 °C |
Package body material | PLASTIC/EPOXY | METAL |
Package shape | RECTANGULAR | ROUND |
Package form | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | NPN | NPN |
Maximum power dissipation(Abs) | 25 W | 85 W |
Certification status | Not Qualified | Not Qualified |
surface mount | NO | NO |
Terminal form | THROUGH-HOLE | UNSPECIFIED |
Terminal location | SINGLE | UPPER |
Transistor component materials | SILICON | SILICON |
Nominal transition frequency (fT) | 0.07 MHz | 8.5 MHz |
Base Number Matches | 1 | 1 |