HUF75842S3S datasheet, PDF - EEWORLD Datasheet

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HUF75842S3S: Description43A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size879KB，11 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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HUF75842S3S Overview

43A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

HUF75842S3S Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Maker	Rochester Electronics
Reach Compliance Code	unknown
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	43 A
Maximum drain-source on-resistance	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	NOT APPLICABLE
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON

HUF75842S3S Related Products

	HUF75842S3S	HUF75842P3	HUF75842S3ST
Description	43A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	43A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	43A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it lead-free?	Lead free	Lead free	Lead free
Maker	Rochester Electronics	Rochester Electronics	Rochester Electronics
Reach Compliance Code	unknown	unknown	unknow
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	150 V
Maximum drain current (ID)	43 A	43 A	43 A
Maximum drain-source on-resistance	0.042 Ω	0.042 Ω	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-220AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
JESD-609 code	e3	e3	e3
Humidity sensitivity level	NOT APPLICABLE	NOT APPLICABLE	1
Number of components	1	1	1
Number of terminals	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	NOT APPLICABLE	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	YES	NO	YES
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT APPLICABLE	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Is it Rohs certified?	-	conform to	conform to

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