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2SC4332L-E1

Description
TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR
CategoryDiscrete semiconductor    The transistor   
File Size345KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2SC4332L-E1 Overview

TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR

2SC4332L-E1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)150
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
surface mountNO
Base Number Matches1
DATA SHEET
SILICON POWER TRANSISTOR
2SC4332,4332-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
PACKAGE DRAWINGS (Unit: mm)
The 2SC4332 and 2SC4332-Z are mold power transistors developed
1.5
−0.1
+0.2
for high-speed switching and feature a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
1.6 ±0.2
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
converters, motor drivers, solenoid drivers, and other low-voltage power
supply devices, as well as for high-current switching.
5.5 ±0.2
7.0 MIN.
1
2
3
FEATURES
• Low collector saturation voltage
V
CE(sat)
= 0.3 V MAX. (I
C
= 3.0 A
/
I
B
= 0.15 A)
• Fast switching speed:
t
f
0.3
μ
s MAX. (I
C
= 3.0 A)
• High DC current gain
1.1 ±0.2
13.7 MIN.
+0.2
0.5
−0.1
2.3 2.3
0.75
0.5
−0.1
+0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Base to Emitter Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Note1
TO-251 (MP-3)
V
100
60
7.0
5.0
10
2.5
15
1.0
Note2
5.0 ±0.2
4.4 ±0.2
4
5.5 ±0.2
+0.2
−0.1
V
V
A
A
A
W
Note3
<R>
6.5 ±0.2
2.3 ±0.2
0.5 ±0.1
Note
1.0 ±0.5
0.4 MIN.
0.5 TYP.
2.5 ±0.5
1.5
Note
5.6 ±0.3
9.5 ±0.5
I
B(DC)
P
T
(T
C
= 25°C)
P
T
(T
A
= 25°C)
T
j
T
stg
1 2 3
0.5 ±0.1
0.5 ±0.1
2.3 ±0.3
2.3 ±0.3
0.15 ±0.15
, 2.0
W
°C
°C
150
−55
to +150
ELECTRODE CONNECTION
TO-252 (MP-3Z)
Notes 1.
PW
10 ms, duty cycle
50%
2.
Printing board mounted
3.
7.5 cm x 0.7 mm, ceramic board mounted
2
1.
2.
3.
4.
Base
Collector
Emitter
Collector Fin
Note
The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16430EJ3V0DS00 (3rd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

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