9W Power Amplifier Die (8.0 – 11.0 GHz)
ITT8508D
Features
•
•
•
•
Broadband Performance
30% typical Power Added Efficiency
50
Ω
Input/Output Impedance
Self-Aligned MSAG
®
MESFET Process
ADVANCED
INFORMATION
Description
The ITT8508D is a two stage MMIC power
amplifier fabricated using GaAsTEK’s mature
®
GaAs Self-Aligned MSAG MESFET Process.
This product is fully matched to 50 ohms on
both the input and the output.
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Rating
DC Drain Supply Voltage
DC Gate Supply Voltage
Power Dissipation
(T
BASE
= 70 °C)
RF Input Power
Junction Temperature
Storage Temperature
Symbol
V
DD
V
GG
P
DISS
P
IN
T
J
T
STG
Value
12
-4
-
2000
150
-40 to +85
Unit
Vdc
Vdc
W
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
DD
=9.0 V, V
GG
=-1.8 V, T
A
=25 °C
Characteristic
Frequency
Output Power, Saturated
Output Power, P
1dB
Power Gain
Gain Flatness Over Frequency
Power Added Efficiency
(P
OUT
=P
1dB
)
Input VSWR
Harmonics
Spurious
Third-Order Intercept Point
Symbol
ƒ
P
SAT
P
1dB
G
P
-
η
-
Nƒ
ο
-
TOI
Min
8.0
Typ
39.5
38
11
+/- 1.0
30
TBD
Max
11.0
Unit
GHz
dBm
dBm
dB
dB
%
dBc
dBc
dBm
-20
-60
TBD
Advanced Information - Specifications Subject to Change Without Notice
902181 B, April 1999
GaAsTEK
5310 Valley Park Drive
Roanoke, VA 24019 USA
www.gaastek.com
Tel: 1-540-563-3949
1-888-563-3949 (USA)
Fax: 1-540-563-8616
1
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