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2SD1819G-Q

Description
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size277KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SD1819G-Q Overview

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SD1819G-Q Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1819G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1218G
Features
Package
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE2
f
T
on
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
ce
/D
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Ma
int
en
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
FE1 *
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Marking symbol
Q
160 to 260
ZQ
R
210 to 340
ZR
S
290 to 460
ZS
No rank
160 to 460
Z
Product of no-rank is not classified and have no marking symbol for rank.
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Rating
60
50
7
Unit
V
V
V
100
200
150
150
mA
mA
°C
mW
°C
−55
to
+150
Conditions
Min
60
Typ
Max
Unit
V
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
50
7
V
V
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
0.1
µA
µA
V
100
V
CE
= 10 V, I
C
= 2 mA
160
90
460
V
CE
= 2 V, I
C
= 100 mA
I
C
=
100 mA, I
B
=
10 mA
0.1
3.5
0.3
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
150
MHz
pF
SJC00372AED
an
M
ain
Di
sc te
on na
tin nc
ue e/
d
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape pacing and the magazine
pacing.
Code
SMini3-F2
Marking Symbol: Z
Pin Name
1: Base
2: Emitter
3: Collector
isc
tin
ue
Publication date: May 2007
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