Power Field-Effect Transistor, 7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Parameter Name | Attribute value |
Parts packaging code | TO-220AB |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknow |
Avalanche Energy Efficiency Rating (Eas) | 235.3 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 800 V |
Maximum drain current (ID) | 7 A |
Maximum drain-source on-resistance | 1.9 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 28 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |