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2SK3529-01

Description
Power Field-Effect Transistor, 7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size28KB,1 Pages
ManufacturerFuji Electric Co., Ltd.
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2SK3529-01 Overview

Power Field-Effect Transistor, 7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

2SK3529-01 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)235.3 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)7 A
Maximum drain-source on-resistance1.9 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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