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IXTP8P25

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size1MB,12 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

IXTP8P25 Overview

Transistor,

IXTP8P25 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIXYS
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)125 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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