IRF450R1 datasheet, PDF - EEWORLD Datasheet

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IRF450R1: Description13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size191KB，3 Pages; ManufacturerSEMELAB; Environmental Compliance

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IRF450R1 Overview

13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN

IRF450R1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	TO-3
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	compliant
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	13 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	52 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

IRF450R1 Related Products

	IRF450R1	IRF450-QR-B	IRF450-JQR-B	IRF450SMD-JQR-B
Description	13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN	13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN	13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN	13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it lead-free?	Lead free	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible
Parts packaging code	TO-3	TO-3	TO-3	TO-3
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Contacts	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V	500 V	500 V
Maximum drain current (ID)	13 A	13 A	13 A	13 A
Maximum drain-source on-resistance	0.4 Ω	0.4 Ω	0.4 Ω	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA	TO-204AA	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	52 A	52 A	52 A	52 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	-	1	1	1

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