Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Maker | IXYS |
package instruction | UNCASED CHIP, R-XUUC-N2 |
Reach Compliance Code | unknown |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain-source on-resistance | 1.5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-XUUC-N2 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | UNCASED CHIP |
Polarity/channel type | P-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | NO LEAD |
Terminal location | UPPER |
Transistor component materials | SILICON |