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W-IXTD7P50

Description
Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size180KB,1 Pages
ManufacturerIXYS
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W-IXTD7P50 Overview

Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

W-IXTD7P50 Parametric

Parameter NameAttribute value
MakerIXYS
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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