R1QLA7218ABB-25RB datasheet, PDF

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R1QLA7218ABB-25RB: DescriptionDDR SRAM; Categorystorage storage; File Size885KB，39 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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R1QLA7218ABB-25RB Overview

DDR SRAM

R1QLA7218ABB-25RB Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	LBGA,
Reach Compliance Code	compliant
Maximum access time	0.55 ns
JESD-30 code	R-PBGA-B165
length	15 mm
memory density	75497472 bit
Memory IC Type	DDR SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX18
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Maximum seat height	1.4 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
width	13 mm

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R1QHA72 / R1QLA72 Series

R1QHA7236ABB / R1QHA7218ABB

R1QLA7236ABB / R1QLA7218ABB

72-Mbit DDRII+ SRAM

2-word Burst

Description

The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous

double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor

memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are

controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products

are suitable for applications which require synchronous operation, high speed, low voltage, high density and

wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

# = B: Latency =2.5, w/o ODT

# = E: Latency =2.5, w/ ODT

= H: Latency =2.0, w/o ODT

= L: Latency =2.0, w/ ODT

R10DS0173EJ0011

Rev. 0.11

2013.01.15

Features

Power Supply

• 1.8 V for core (V

), 1.4 V to V

for I/O (V

DDQ

)

Clock

• Fast clock cycle time for high bandwidth

• Two input clocks (K and /K) for precise DDR timing at clock rising edges only

• Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems

• Clock-stop capability with

μs

restart

I/O

• Common data input/output bus

• Pipelined double data rate operation

• HSTL I/O

• User programmable output impedance

• DLL/PLL circuitry for wide output data valid window and future frequency scaling

• Data valid pin (QVLD) to indicate valid data on the output

Function

• Two-tick burst for low DDR transaction size

• Internally self-timed write control

• Simple control logic for easy depth expansion

• JTAG 1149.1 compatible test access port

Package

• 165 FBGA package (13 x 15 x 1.4 mm)

Notes:

QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress

Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team)

2. The specifications of this device are subject to change without notice. Please contact your nearest

Renesas Electronics Sales Office regarding specifications.

3. Refer to

"http://www.renesas.com/products/memory/fast_sram/qdr_sram/index.jsp"

for the latest and detailed information.

4. Descriptions about x9 parts in this datasheet are just for reference.

Rev. 0.11 : 2013.01.15

R10DS0173EJ0011

R1QLA7218ABB-25RB Related Products

	R1QLA7218ABB-25RB	R1QLA7218ABB-25IB0	R1QLA7218ABB-25RT	R1QLA7218ABB-25RS	R1QLA7218ABB-25IA	R1QLA7218ABB-25IB	R1QLA7218ABB-25IS	R1QLA7218ABB-25IT	R1QLA7218ABB-25IA0	R1QLA7218ABB-25RA
Description	DDR SRAM	R1QLA7218ABB-25IB0	DDR SRAM	DDR SRAM	DDR SRAM	DDR SRAM	DDR SRAM	DDR SRAM	IC,SYNC SRAM,DDR,4MX18,CMOS,BGA,165PIN,PLASTIC	DDR SRAM
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	unknow	compli
Maximum access time	0.55 ns	0.55 ns	0.55 ns	0.55 ns	0.55 ns	0.55 ns	0.55 ns	0.55 ns	0.55 ns	0.55 ns
JESD-30 code	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165
memory density	75497472 bit	75497472 bit	75497472 bit	75497472 bit	75497472 bit	75497472 bit	75497472 bit	75497472 bit	75497472 bi	75497472 bi
Memory IC Type	DDR SRAM	STANDARD SRAM	DDR SRAM	DDR SRAM	DDR SRAM	DDR SRAM	DDR SRAM	DDR SRAM	STANDARD SRAM	DDR SRAM
memory width	18	18	18	18	18	18	18	18	18	18
Number of terminals	165	165	165	165	165	165	165	165	165	165
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	70 °C	70 °C	85 °C	85 °C	85 °C	85 °C	85 °C	70 °C
Minimum operating temperature	-	-40 °C	-	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-
organize	4MX18	4MX18	4MX18	4MX18	4MX18	4MX18	4MX18	4MX18	4MX18	4MX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LBGA	BGA	LBGA	LBGA	LBGA	LBGA	LBGA	LBGA	BGA	LBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE	GRID ARRAY	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
package instruction	LBGA,	-	LBGA,	LBGA,	LBGA,	LBGA,	LBGA,	LBGA,	BGA, BGA165,11X15,40	LBGA,
length	15 mm	-	15 mm	15 mm	15 mm	15 mm	15 mm	15 mm	-	15 mm
Number of functions	1	-	1	1	1	1	1	1	-	1
Maximum seat height	1.4 mm	-	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	-	1.4 mm
Maximum supply voltage (Vsup)	1.9 V	-	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	-	1.9 V
Minimum supply voltage (Vsup)	1.7 V	-	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	-	1.7 V
Nominal supply voltage (Vsup)	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	-	1.8 V
width	13 mm	-	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	-	13 mm

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