DDR DRAM, 32MX9, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Integrated Silicon Solution ( ISSI ) |
| Parts packaging code | BGA |
| package instruction | 11 X 18.50 MM, LEAD FREE, FBGA-144 |
| Contacts | 144 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 13 weeks 6 days |
| access mode | MULTI BANK PAGE BURST |
| Maximum access time | 3.3 ns |
| Other features | AUTO REFRESH |
| Maximum clock frequency (fCLK) | 300 MHz |
| I/O type | COMMON |
| interleaved burst length | 2,4,8 |
| JESD-30 code | R-PBGA-B144 |
| length | 18.5 mm |
| memory density | 301989888 bit |
| Memory IC Type | DDR DRAM |
| memory width | 9 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 144 |
| word count | 33554432 words |
| character code | 32000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 32MX9 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TBGA |
| Encapsulate equivalent code | BGA144,12X18,40/32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE |
| power supply | 1.5/1.8,1.8,2.5 V |
| Certification status | Not Qualified |
| Maximum seat height | 1.2 mm |
| Maximum slew rate | 0.819 mA |
| Maximum supply voltage (Vsup) | 1.9 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal form | BALL |
| Terminal pitch | 1 mm |
| Terminal location | BOTTOM |
| width | 11 mm |
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