WPDE4M4VB-70MJM datasheet, PDF

WPDE4M4VB-70MJM: DescriptionEDO DRAM, 4MX4, 70ns, CMOS, PDSO24,; Categorystorage storage; File Size368KB，7 Pages; ManufacturerWhite Electronic Designs Corporation; Websitehttp://www.wedc.com/

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WPDE4M4VB-70MJM Overview

EDO DRAM, 4MX4, 70ns, CMOS, PDSO24,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	White Electronic Designs Corporation
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J24
JESD-609 code	e0
memory density	16777216 bit
Memory IC Type	EDO DRAM
memory width	4
Number of terminals	24
word count	4194304 words
character code	4000000
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	4MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ24/26,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
power supply	3.3 V
refresh cycle	2048
self refresh	NO
Maximum standby current	0.001 A
Maximum slew rate	0.11 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL

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