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MSS40,448-E45

Description
Mixer Diode, Medium Barrier, Millimeter Wave Band, Silicon, CERAMIC, CASE E45, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size426KB,4 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric View All

MSS40,448-E45 Overview

Mixer Diode, Medium Barrier, Millimeter Wave Band, Silicon, CERAMIC, CASE E45, 4 PIN

MSS40,448-E45 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMACOM
package instructionS-CXMW-F4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationRING, 4 ELEMENTS
Maximum diode capacitance0.3 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandMILLIMETER WAVE BAND
JESD-30 codeS-CXMW-F4
JESD-609 codee4
Number of components4
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Schottky barrier typeMEDIUM BARRIER
MSS40,000 Series
Medium Barrier Silicon Schottky Diodes
Description
The Aeroflex / Metelics MSS40,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of 0 dBm to +6
dBm per diode.
Features
V
F
, R
D
and C
J
matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength
Rated V
BR
50 mA
-65 ºC to +150 ºC
-65 ºC to +150 ºC
100 mW per junction at T
A
= 25 ºC, derate
linearly to zero at T
A
= +150 ºC
+ 260 ºC for 5 sec.
4 grams minimum
Rating
Chip
Electrical Specifications,
T
A
= 25 ºC
Model
MSS40,045-C15
MSS40,048-C15
Test
Conditions
V
F
Configuration
TYP
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Outline
V
V
pF
GHz
Single Junction
Single Junction
0.42
0.40
I
F
= 1
mA
3
3
I
R
=
10
μA
0.09 / 0.12
0.12 / 0.15
V
R
= 0 V
F = 1 MHz
7
7
15
15
253
190
C15
C15
I
F
= 5 mA
Revision Date: 7/7/2014

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