IRFY330-JQR-BR1 datasheet, PDF

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IRFY330-JQR-BR1: DescriptionPower Field-Effect Transistor, 5.5A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size11KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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IRFY330-JQR-BR1 Overview

Power Field-Effect Transistor, 5.5A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

IRFY330-JQR-BR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	5.5 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

IRFY330-JQR-BR1 Related Products

	IRFY330-JQR-BR1
Description	Power Field-Effect Transistor, 5.5A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	5.5 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AB
JESD-30 code	S-MSFM-P3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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