UPA1600CX datasheet, PDF - EEWORLD Datasheet

UPA1600CX: Description500 mA, 30 V, 8 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size353KB，8 Pages; ManufacturerNEC ( Renesas ); Websitehttps://www2.renesas.cn/zh-cn/

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UPA1600CX Overview

500 mA, 30 V, 8 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Parameter Name	Attribute value
Number of terminals	20
Minimum breakdown voltage	30 V
Processing package description	Plastic, SOP-20
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	SEPARATE, 8 ELEMENTS WITH BUILT-IN diodes AND resistors
Number of components	8
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	1 W
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	Universal small signal
Maximum leakage current	0.5000 A
Maximum drain on-resistance	4 ohm

	UPA1600CX	UPA1600GS	UPA1600
Description	500 mA, 30 V, 8 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	500 mA, 30 V, 8 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	500 mA, 30 V, 8 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals	20	20	20
Minimum breakdown voltage	30 V	30 V	30 V
Processing package description	Plastic, SOP-20	Plastic, SOP-20	Plastic, SOP-20
state	DISCONTINUED	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING
terminal coating	tin lead	tin lead	tin lead
Terminal location	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	SEPARATE, 8 ELEMENTS WITH BUILT-IN diodes AND resistors	SEPARATE, 8 ELEMENTS WITH BUILT-IN diodes AND resistors	SEPARATE, 8 ELEMENTS WITH BUILT-IN diodes AND resistors
Number of components	8	8	8
transistor applications	switch	switch	switch
Transistor component materials	silicon	silicon	silicon
Maximum ambient power consumption	1 W	1 W	1 W
Channel type	N channel	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	Universal small signal	Universal small signal	Universal small signal
Maximum leakage current	0.5000 A	0.5000 A	0.5000 A
Maximum drain on-resistance	4 ohm	4 ohm	4 ohm

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