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MJE701

Description
Power Bipolar Transistor, 4A I(C), PNP
CategoryDiscrete semiconductor    The transistor   
File Size85KB,1 Pages
ManufacturerGeneral Transistor Corp
Download Datasheet Parametric View All

MJE701 Overview

Power Bipolar Transistor, 4A I(C), PNP

MJE701 Parametric

Parameter NameAttribute value
MakerGeneral Transistor Corp
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)4 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
surface mountNO
Nominal transition frequency (fT)1 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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