Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264AA, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | IXYS |
| Parts packaging code | TO-264AA |
| package instruction | TO-264AA, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 75 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SINGLE |
| Gate emitter threshold voltage maximum | 5 V |
| Gate-emitter maximum voltage | 20 V |
| JEDEC-95 code | TO-264AA |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 450 ns |
| Nominal on time (ton) | 100 ns |
| IXGK50N60B | IXGH50N60B | IXGT50N60B | |
|---|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264AA, 3 PIN | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268, D3PAK-3 |
| Is it lead-free? | Lead free | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to | conform to |
| Maker | IXYS | IXYS | IXYS |
| Parts packaging code | TO-264AA | TO-247AD | TO-268 |
| package instruction | TO-264AA, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | D3PAK-3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 75 A | 75 A | 75 A |
| Collector-emitter maximum voltage | 600 V | 600 V | 600 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Gate emitter threshold voltage maximum | 5 V | 5 V | 5 V |
| Gate-emitter maximum voltage | 20 V | 20 V | 20 V |
| JEDEC-95 code | TO-264AA | TO-247AD | TO-268 |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 2 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W | 250 W | 300 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | YES |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | POWER CONTROL | POWER CONTROL | POWER CONTROL |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal off time (toff) | 450 ns | 450 ns | 450 ns |
| Nominal on time (ton) | 100 ns | 100 ns | 100 ns |
| ECCN code | - | EAR99 | EAR99 |
| Other features | - | FAST | FAST |
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