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WME128K8-200CCE

Description
EEPROM, 128KX8, 200ns, Parallel, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32
Categorystorage    storage   
File Size253KB,11 Pages
ManufacturerWhite Electronic Designs Corporation
Websitehttp://www.wedc.com/
Download Datasheet Parametric View All

WME128K8-200CCE Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32

WME128K8-200CCE Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWhite Electronic Designs Corporation
package instructionDIP,
Reach Compliance Codeunknown
Maximum access time200 ns
Other featuresWRITE ENDURANCE 10000 CYCLES; 10 YEARS DATA RETENTION; HARDWARE AND SOFTWARE DATA PROTECTION
Data retention time - minimum10
Durability10000 Write/Erase Cycles
JESD-30 codeR-CDIP-T32
length42.4 mm
memory density1048576 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height5.1 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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