IRGNI0075M12 datasheet, PDF - EEWORLD Datasheet

IRGNI0075M12: DescriptionInsulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7; CategoryDiscrete semiconductor The transistor; File Size121KB，4 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, INT-A-PAK-7

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-PUFM-X7
Contacts	7
Reach Compliance Code	compliant
Other features	FAST
Maximum collector current (IC)	75 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE WITH BUILT-IN CONFIGURABLE DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X7
JESD-609 code	e0
Number of components	1
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	380 W
Maximum power dissipation(Abs)	380 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
VCEsat-Max	2.8 V

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