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UES1002

Description
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, GLASS, A PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size71KB,1 Pages
ManufacturerBkc Semiconductors Inc.
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UES1002 Overview

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, GLASS, A PACKAGE-2

UES1002 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
package instructionO-LALF-W2
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.98 V
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation1.33 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL

UES1002 Related Products

UES1002 UES1003 UES1001
Description Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, GLASS, A PACKAGE-2 Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, GLASS, A PACKAGE-2 Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, GLASS, A PACKAGE-2
Is it Rohs certified? incompatible incompatible incompatible
package instruction O-LALF-W2 GLASS, A PACKAGE-2 GLASS, A PACKAGE-2
Reach Compliance Code unknown unknown unknown
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.98 V 0.98 V 0.98 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A
Package body material GLASS GLASS GLASS
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum power dissipation 1.33 W 1.33 W 1.33 W
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 150 V 50 V
Maximum reverse recovery time 0.025 µs 0.025 µs 0.025 µs
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maker Bkc Semiconductors Inc. - Bkc Semiconductors Inc.
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