LITE-ON
SEMICONDUCTOR
L30ESDxVC3-2
STAND-OFF VOLTAGE -
5~24
Volts
POWER DISSIPATION -
300
WATTS
DUAL ESD
PROTECTION DIODES
GENERAL DESCRIPTION
The L30ESD5V0C3-2~L30ESD24VC3-2 are a dual voltage
suppressor designed to protect components which are connected to
data and transmission lines against Electro Static Discharge (ESD).
It clamps the voltage just above the logic level supply for positive
transients , and to a diode drop below ground for negative
transients.
It can work as bi-directional suppressor by connecting only pin 1 to
2.
SOT23
DIM.
F
G
SOT23
MIN.
0.89
0.30
0.085
2.75
1.20
0.85
1.70
2.10
0.0
MAX.
1.40
0.51
0.18
3.04
1.60
1.05
2.10
2.75
0.1
A
B
C
D
I
E
F
G
H
I
L
S
FEATURES
2 Unidirectional ESD protection.
Max. peak pulse power : Ppp = 300W at tp = 8/20 us
Ultra low leakage current : IRM < 1uA @ VBR
ESD protection > 25KV per MIL-STD-883C, Method 3015-6: Class
3.
IEC 61000-4-2, level 4 ( ESD ),>15KV(air) ;>8KV(contact ).
Ultra small SMD plastic packages
3
0.6 typ.
0.35
0.65
All Dimensions in millimeter
PIN ASSIGNMENT
1,2
Cathode
Ground
APPLICATION
Computers and peripherals
Communication system
Portable electronics
Cellular handsets and accessories.
1
2
3
Marking & Orientation
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish), solderable per
J-STD-002 and JESD22-B/02.
Moisture Sensitivity: Leve 1 per J-STD-020C
Component in accordance to RoHs 2002/95/EC
Marking: L30ESD5V0C3-2, XX XX: LT C5
L30ESD12V0C3-2, XXX XX: VCC YM
L30ESD24V0C3-2, XXX XX: VCO YM
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
Rating
Peak pulse Power ( 8/20us Waveform)
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature, t max = 10s
Symbol
P
PPM
T
J
Tstg
T
L
Value
300
-55 to + 125
-55 to + 150
260
Unit
W
℃
℃
℃
REV. 1, Sep-2009, KSIR03
RATING AND CHARACTERISTIC CURVES
L30ESDxVC3-2
120
100% Ipp: 8us
Percent of Peak Pulse Current
(%)
Percent of Peak Pulse Current
%
100%
90%
80
e
-1
50% Ipp: 20us
40
10%
0
0
10
20
30
40
tr = 0.7 ~1 ns
30 ns
60 ns
Time (ns)
Time (us)
Figure 1. 8/20 us pulse waveform according to IEC 61000-4-5
Figure 2. ESD pulse waveform according to IEC 61000-4-2
10000
T
J
=25
℃
, tp (us) = 8/20 us
exponentially decay waveform
1.2
Peak pulse Powe
r (W)
1000
100
Ppp / Ppp (25
℃
)
0.8
0.4
10
1
10
100
1000
10000
0
0
25
50
75
100
Junction Temperature (
℃
)
125
Pulse Time (us)
Figure 3. Power Dissipation versus Pulse Time
180
160
140
Figure 4. Peak pulse power versus T
J
10.0
T
J
=25
℃
, f=1MHz, Vosc=100 mV
Capacitance (pF)
100
80
60
40
20
5V
IR / IR (25
℃
)
120
1.0
12V
24V
0
0.0
1.0
2.0
3.0
4.0
5.0
0.1
0
30
60
90
120
150
Reverse Voltage (V)
Junction Temperature (
℃
)
Figure 5. Typical Junction Capactiance
Figure 6. Reverse Leakage Current versus T
J
RATING AND CHARACTERISTIC CURVES
L30ESDxVC3-2
I/O1
+/-8KV
ESD Contact
discharge
V (i/o)
Figure 7. ESD Test Configuration
L30ESD5V0C3-2
V (i/o)
V (i/o)
Figure 8. Clamped +8 kV ESD voltage waveform
L30ESD12VC3-2
Figure 9. Clamped -8 kV ESD voltage waveform
V (i/o)
V (i/o)
Figure 10. Clamped +8 kV ESD voltage
waveform
L30ESD24VC3-2
Figure 11. Clamped -8 kV ESD voltage
waveform
V (i/o)
V (i/o)
Figure 12. Clamped +8 kV ESD voltage
waveform
Figure 13. Clamped -8 kV ESD voltage
waveform
◎
Specifications mentioned in this publication are subject to change without notice.
GD32 MCU
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