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SS8550LT1H

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size178KB,2 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
Download Datasheet Parametric Compare View All

SS8550LT1H Overview

Transistor

SS8550LT1H Parametric

Parameter NameAttribute value
MakerShandong Yiguang Electronic Joint Stock Co., Ltd.
package instruction,
Reach Compliance Codeunknown
SEMICONDUCTOR
TECHNICAL DATA
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
*
Complement to SS8050LT1
*
Collector Current :Ic= -800mA
*
High Total Power Dissipation :Pc=625mW
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Shandong Yiguang Electronic Joint stock Co., Ltd
SS8550LT1
PNP EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Veb
Ic
P
D
Tj
Tstg
Rating
-40
-25
-6
-800
625
150
-55-150
Unit
V
V
V
mA
mW
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
Icbo
Iceo
Iebo
Hfe
1
Hfe
2
Vce(sat)
Vbe(sat)
fT
100
120
40
-0.6
-1.2
V
V
MHz
Min
-40
-25
-6
-100
-100
-100
350
Typ
Max
Unit
V
V
V
NA
NA
Na
Test Conditions
Ic=-100uA Ie=0
Ic= -1mA Ib=0
Ie= -100uA Ic=0
Vcb= -40V Ie=0
Vce=-20 V Ie=0
Veb=-5V Ic=0
Vce= -1V Ic= 100mA
Vce= -1V Ic= 800mA
Ic= -800mA Ib= -80mA
Ic= -800mA Ib= -80mA
Vce=-10V Ic=-50mA
f=30MHz
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width≤300uS,Duty cycle≤2%
CLASSIFICATION OF Hfe
(1)
Rank
Range
DEVICE MARKING:
SS8550LT1=Y2
L
120—200
H
200—350

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