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BAV20-L0A0G

Description
Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
CategoryDiscrete semiconductor    diode   
File Size194KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BAV20-L0A0G Overview

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,

BAV20-L0A0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BAV19 / BAV20 / BAV21
Taiwan Semiconductor
Small Signal Product
High Voltage Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Through-hole device type mounting
- Hermetically sealed glasss
- Solder hot dip tin (Sn) lead finish
- All external surfaces are corrosion resistant and
leads are readily solderable
- Packing code with suffix "G" means
Halogen free
DO-35
MECHANICAL DATA
- Case: DO-35 package
- High temperature soldering guaranteed: 260
o
C/10s
- Polarity: Indicated by black cathode band
- Weight: 109 ± 4 mg
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
PARAMETER
Power Dissipation
Peak Forward Surge
Current
Pulse Width = 1 s , Square Wave
Pulse Width = 1
μs
, Square Wave
SYMBOL
P
D
I
FSM
I
O
R
θJA
T
J
, T
STG
SYMBOL
I
R
= 100
μA
I
F
= 100 mA
I
F
= 200 mA
BAV19
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
BAV20
V
R
= 100 V
V
R
= 150 V
I
R
C
J
trr
-
-
-
100
5
50
nA
pF
ns
V
(BR)
MIN
120
200
250
V
F
-
-
VALUE
500
1
4
200
300
-65 to +200
MAX
-
-
-
1.00
1.25
V
V
o
o
UNIT
mW
A
mA
C/W
o
Average Forward Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
PARAMETER
BAV19
Reverse Breakdown Voltage
BAV20
BAV21
Forward Voltage
C
UNIT
V
R
= 200 V
BAV21
V
R
= 0 , f = 1.0 MHz
(Note 1)
Note 1: Test condition : I
F
= I
R
= 30mA , R
L
=100Ω , I
RR
=3mA
Document Number: DS_S1412015
Version: D14

BAV20-L0A0G Related Products

BAV20-L0A0G BAV20A0G BAV21R0G BAV21A0G BAV21-L0R0G BAV21-L0A0G BAV19-L0A0G BAV20-L0R0G
Description Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35, Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35
JESD-30 code O-LALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 200 °C 175 °C 175 °C 175 °C 200 °C 200 °C 200 °C 200 °C
Minimum operating temperature -65 °C -55 °C -55 °C -55 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Package body material GLASS UNSPECIFIED UNSPECIFIED UNSPECIFIED GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 200 V 250 V 250 V 250 V 250 V 120 V 200 V
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Is it Rohs certified? conform to conform to conform to conform to conform to conform to - conform to
Maker Taiwan Semiconductor - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Maximum power dissipation 0.5 W - - - 0.5 W 0.5 W 0.5 W 0.5 W
Maximum reverse recovery time 0.05 µs - - - 0.05 µs 0.05 µs 0.05 µs 0.05 µs

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