Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Taiwan Semiconductor |
package instruction | O-LALF-W2 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
JEDEC-95 code | DO-35 |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 200 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 0.2 A |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.5 W |
Maximum repetitive peak reverse voltage | 200 V |
Maximum reverse recovery time | 0.05 µs |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
BAV20-L0A0G | BAV20A0G | BAV21R0G | BAV21A0G | BAV21-L0R0G | BAV21-L0A0G | BAV19-L0A0G | BAV20-L0R0G | |
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Description | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, DO-35, | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35, |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JEDEC-95 code | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 | DO-35 |
JESD-30 code | O-LALF-W2 | O-XALF-W2 | O-XALF-W2 | O-XALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 200 °C | 175 °C | 175 °C | 175 °C | 200 °C | 200 °C | 200 °C | 200 °C |
Minimum operating temperature | -65 °C | -55 °C | -55 °C | -55 °C | -65 °C | -65 °C | -65 °C | -65 °C |
Maximum output current | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
Package body material | GLASS | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | GLASS | GLASS | GLASS | GLASS |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Maximum repetitive peak reverse voltage | 200 V | 200 V | 250 V | 250 V | 250 V | 250 V | 120 V | 200 V |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | - | conform to |
Maker | Taiwan Semiconductor | - | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Maximum power dissipation | 0.5 W | - | - | - | 0.5 W | 0.5 W | 0.5 W | 0.5 W |
Maximum reverse recovery time | 0.05 µs | - | - | - | 0.05 µs | 0.05 µs | 0.05 µs | 0.05 µs |