Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SAMSUNG |
Parts packaging code | BGA |
package instruction | VFBGA, BGA90,9X15,32 |
Contacts | 90 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 5.4 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 133 MHz |
I/O type | COMMON |
interleaved burst length | 1,2,4,8 |
JESD-30 code | R-PBGA-B90 |
length | 13 mm |
memory density | 134217728 bit |
Memory IC Type | SYNCHRONOUS DRAM |
memory width | 32 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 90 |
word count | 4194304 words |
character code | 4000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -25 °C |
organize | 4MX32 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | VFBGA |
Encapsulate equivalent code | BGA90,9X15,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 240 |
power supply | 2.5 V |
Certification status | Not Qualified |
refresh cycle | 4096 |
Maximum seat height | 1 mm |
self refresh | YES |
Continuous burst length | 1,2,4,8,FP |
Maximum standby current | 0.0005 A |
Maximum slew rate | 0.12 mA |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
width | 8 mm |