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K4M28323LH-FG7L0

Description
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
Categorystorage    storage   
File Size143KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4M28323LH-FG7L0 Overview

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90

K4M28323LH-FG7L0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionVFBGA, BGA90,9X15,32
Contacts90
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B90
length13 mm
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals90
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA90,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)240
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.0005 A
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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