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CY7C199CN
256K (32K x 8) Static RAM
Features
•
•
•
•
•
•
•
•
Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns
Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
CMOS for optimum speed and power
TTL-compatible inputs and outputs
2.0V data retention
Low CMOS standby power
Automated power down when deselected
Available in Pb-free 28-pin TSOP I, 28-pin Molded SOJ and
28-pin DIP packages
General Description
[1]
The CY7C199CN is a high performance CMOS Asynchronous
SRAM organized as 32K by 8 bits that supports an
asynchronous memory interface. The device features an
automatic power down feature that reduces power
consumption when deselected.
See the
“Truth Table” on page 3
in this data sheet for a
complete description of read and write modes.
The CY7C199CN is available in Pb-free 28-pin TSOP I, 28-pin
Molded SOJ and 28-pin DIP package(s).
Logic Block Diagram
Input Buffer
Row Decoder
RAM Array
Sense Amps
I/Ox
CE
Column Decoder
Power
Down
Circuit
WE
OE
X
A
X
Product Portfolio
–12
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
(low power)
12
85
500
–15
15
80
500
–20
20
75
500
–25
25
75
500
Unit
ns
mA
µA
Note
1. For best practices recommendations, refer to the Cypress application note
System Design Guidelines
on
www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-06435 Rev. *B
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised March 08, 2007
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CY7C199CN
Pin Layout and Specifications
28 DIP
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
IO
0
IO
1
IO
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
IO
7
IO
6
IO
5
IO
4
IO
3
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
IO
0
IO
1
IO
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 SOJ
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC
WE
A
4
A
3
A
2
A
1
OE
A
0
CE
IO
7
IO
6
IO
5
IO
4
IO
3
OE
A
1
A
2
A
3
A
4
WE
V
CC
A
5
A
6
A
7
A
8
A
9
A
10
A
11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 TSOP I (8 x 13.4 mm)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
0
CE
IO
7
IO
6
IO
5
IO
4
IO
3
V
SS
IO
2
IO
1
IO
0
A
14
A
13
A
12
Document #: 001-06435 Rev. *B
Page 2 of 14
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CY7C199CN
Pin Description
Pin
A
X
CE
IO
X
OE
V
CC
V
SS
WE
Input
Control
Input or Output
Control
Supply
Supply
Control
Type
Description
Address Inputs
Chip Enable
Data Input Outputs
Output Enable
Power (5.0V)
Ground
Write Enable
DIP
1, 2, 3, 4, 5, 6, 7, 8, 9,
10, 21, 23, 24, 25, 26
20
11, 12, 13, 15, 16, 17,
18, 19
22
28
14
27
SOJ
1, 2, 3, 4, 5, 6, 7, 8, 9,
10, 21, 23, 24, 25, 26
20
11, 12, 13, 15, 16, 17,
18, 19
22
28
14
27
TSOP I
2, 3, 4, 5, 8, 9, 10, 11, 12,
13, 14, 15, 16, 17, 28
27
18, 19, 20, 22, 23, 24, 25,
26
1
7
21
6
Truth Table
CE
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
IOx
High-Z
Data Out
Data In
High-Z
Mode
Deselect/Power Down
Read
Write
Selected, Outputs Disabled
Power
Stand by (I
SB
)
Active (I
CC
)
Active (I
CC
)
Active (I
CC
)
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.
Parameter
T
STG
T
AMB
V
CC
V
IN
, V
OUT
I
OUT
V
ESD
I
LU
Storage Temperature
Ambient Temperature with Power Applied (that is, case temperature)
Core Supply Voltage Relative to V
SS
DC Voltage Applied to Any Pin Relative to V
SS
Output Short-Circuit Current
Static Discharge Voltage (in accordance with MIL-STD-883, Method 3015)
Latch-up Current
Description
Value
–65 to +150
–55 to +125
–0.5 to +7.0
–0.5 to V
CC
+ 0.5
20
> 2001
> 200
Unit
°C
°C
V
V
mA
V
mA
Operating Range
Range
Commercial
Industrial
Automotive-A
Ambient Temperature (T
A
)
0°C to 70°C
–40°C to 85°C
Voltage Range (V
CC
)
5.0V ± 10%
5.0V ± 10%
Document #: 001-06435 Rev. *B
Page 3 of 14
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CY7C199CN
DC Electrical Characteristics
Over the Operating Range (–12, –15)
[2]
Parameter
V
IH
V
IL
V
OH
V
OL
I
CC
I
SB1
Description
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage V
CC
= Min, I
OH
= –4.0 mA
Output LOW Voltage V
CC
= Min, I
OL
= 8.0 mA
V
CC
Operating
Supply Current
V
CC
= Max, I
OUT
= 0 mA,
f = F
max
= 1/t
RC
Condition
Power
–
–
–
–
–
–
L
–
L
–
–
–12
Min
2.2
–0.5
2.4
–
–
–
–
–
–
–5
–5
Max
V
CC
+ 0.3
0.8
–
0.4
85
30
10
10
500
+5
+5
Min
2.2
–0.5
2.4
–
–
–
–
–
–
–5
–5
–15
Max
V
CC
+ 0.3
0.8
–
0.4
80
30
10
10
500
+5
+5
Unit
V
V
V
V
mA
mA
mA
mA
µA
µA
µA
Automatic CE Power Max V
CC
, CE
≥
V
IH
,
Down Current TTL
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = F
max
Inputs
Automatic CE Power Max V
CC
, CE
≥
V
CC
– 0.3V,
Down Current CMOS V
IN
≥
V
CC
– 0.3V, or V
IN
≤
0.3V, f = 0
Inputs
Output Leakage
Current
Input Leakage
Current
GND
≤
V
I
≤
V
CC
, Output Disabled
GND
≤
V
I
≤
V
CC
I
SB2
I
OZ
I
IX
DC Electrical Characteristics
Over the Operating Range (–20, –25)
[2]
Parameter
V
IH
V
IL
V
OH
V
OL
I
CC
I
SB1
Description
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage V
CC
= Min, I
OH
= –4.0 mA
Output LOW Voltage V
CC
= Min, I
OL
= 8.0 mA
V
CC
Operating
Supply Current
V
CC
= Max, I
OUT
= 0 mA,
f = F
max
= 1/t
RC
Condition
Power
–
–
–
–
–
–
L
–
L
–
–
–20
Min
2.2
–0.5
2.4
–
–
–
–
–
–
–5
–5
Max
V
CC
+ 0.3
0.8
–
0.4
75
30
10
10
500
+5
+5
Min
2.2
–0.5
2.4
–
–
–
–
–
–
–5
–5
–25
Max
V
CC
+ 0.3
0.8
–
0.4
75
30
10
10
500
+5
+5
Unit
V
V
V
V
mA
mA
mA
mA
µA
µA
µA
Automatic CE Power Max V
CC
, CE
≥
V
IH
,
Down Current TTL
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = F
max
Inputs
Automatic CE Power Max V
CC
, CE
≥
V
CC
– 0.3V,
Down Current CMOS V
IN
≥
V
CC
– 0.3V, or V
IN
≤
0.3V, f = 0
Inputs
Output Leakage
Current
Input Leakage
Current
GND
≤
Vi
≤
V
CC
, Output Disabled
GND
≤
Vi
≤
V
CC
I
SB2
I
OZ
I
IX
Note
2. V
IL
(min) = –2.0V for pulse durations of less than 20 ns.
Document #: 001-06435 Rev. *B
Page 4 of 14
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