CMF05
TOSHIBA Fast Recovery Diode
Silicon Diffused Type
CMF05
②
0.65
±
0.2
3.8
±
0.1
4.7
±
0.2
0.16
0 ~ 0.1
0.98
±
0.1
①
ANODE
②
CATHODE
High-Speed Rectifier Applications (Fast Recovery)
Switching Mode Power Supply Applications
DC-DC Converter Applications
•
•
•
•
•
Repetitive peak reverse voltage: V
RRM
= 1000 V
Average forward current: I
F (AV)
= 0.5 A
Forward voltage: V
FM
= 2.7 V (max)
Very fast reverse-recovery time: t
rr
= 100 ns (max)
Suitable for compact assembly due to the use of a small
surface-mount package“ M−FLAT
TM
” (Toshiba package name)
Unit: mm
①
1.75
±
0.1
+ 0.2
2.4
−
0.1
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Repetitive peak reverse voltage
Average forward current
Peak one-cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
1000
0.5 (Note 1)
10 (50 Hz)
(Note 2)
−40
to 125
−40
to 150
Unit
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
⎯
⎯
3-4E1A
Weight: 0.023 g (typ.)
Note 1: Tℓ
=
92°C
Rectangular waveform (α
=
180°)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2010-02-17
0.65
±
0.2
CMF05
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Forward recovery time
Symbol
V
FM
I
RRM
t
rr
t
fr
Test Condition
I
FM
=
0.5 A (pulse test)
V
RRM
=
800 V (pulse test)
I
F
= 1 A, di/dt
= −30
A/μs
I
F
=
1 A
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 mm)
Device mounted on a glass-epoxy
board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 mm )
Device mounted on a glass-epoxy
board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 mm)
Thermal resistance (junction to lead)
R
th (j-ℓ)
⎯
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
550
⎯
Max
2.7
50
100
⎯
Unit
V
μA
ns
ns
60
Thermal resistance
R
th (j-a)
⎯
⎯
135
°C/W
⎯
⎯
210
⎯
⎯
16
°C/W
Marking
Abbreviation Code
Part No.
Standard Soldering Pad
Unit: mm
F5
CMF05
2.1
1.4
3.0
1.4
Handling Precautions
1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a
moment. Do not exceed any of these ratings.
The following are the general derating methods we recommend for designing a circuit using this device.
V
RRM
: We recommend that the worst-case voltage, including surge voltage, be no greater than 80% of the absolute
maximum rating of V
RRM
for a DC circuit; and no greater than 50% of that of V
RRM
for an AC circuit.
V
RRM
has a temperature coefficient (0.1%/℃). Be sure to take this temperature coefficient into account when
designing a device for use at low temperature.
I
F(AV)
: We recommend that the worst case current be no greater than 80% of the absolute maximum rating of I
F(AV)
.
Carry out sufficient heat design. If it is not possible to design a circuit with excellent heat radiation, set a margin by
using an allowable Ta max-I
F(AV
) curve.
I
FSM
: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom
occurs during the lifespan of the device.
T
j
:
Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used
at a T
j
of below 100°C.
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CMF05
2) Thermal resistance between junction and ambient fluctuates depending on the mounting condition of the device.
When using the device, be sure to design the circuit board and soldering land size to match the appropriate thermal
resistance value.
Refer to the Rectifier databook for further information.
3) Moisture-Proof Packing
The CMF05 is packed in a moisture-proof laminated aluminum bag.
Precautions for Transportation and Storage
(1) Avoid excessive vibration during transportation.
(2) Do not toss or drop the packed devices to avoid ripping of the bag.
(3) After opening the moisture-proof bag, the devices should be stored at a temperature of 5°C to 30°C and at an RH
of 70% or below. The devices should be assembled within the defined period.
Reflow Soldering Conditions:
First reflow soldering:
Second reflow soldering:
Third reflow soldering:
Within 120 hours after opening the moisture-proof bag
Within 72 hours after the first reflow soldering
Within 72 hours after the second reflow soldering
Flow Soldering Conditions:
Perform flow soldering within 120 hours after opening the moisture-proof bag. Flow soldering is permitted at
most once.
Preheat the devices for 60 to 120 seconds at a temperature of 150°C.
(4) The moisture-proof bag may be stored unopened for up to 12 months at 5°C to 30°C at an RH of 90% or below.
If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the 30% dot has
changed from blue to pink) or the expiration date has passed, the devices should be baked as follows:
Baking conditions: 60°C
±
5°C for 24 to 36 hours. Perform baking at most once.
Repeated baking can cause the peeling strength of the tape to change and lead to an assembly problem.
Furthermore, countermeasures against static electricity should be taken during baking.
30%
The humidity indicator shows an approximate ambient humidity at 25°C.
If the ambient humidity is below 10%, the color of all the indicator dots is blue.
If, upon opening the bag, the color of the 30% dot has changed from blue to pink,
the devices should be baked before assembly.
4) Mounting Method
½Using
Infrared Reflow
(1) Heating the top and bottom with long or medium infrared rays is recommended (see Figure 1).
Medium infrared ray heater
(Reflow heater)
Device flow
Long infrared ray heater (preheater)
Figure 1 Heating the top and bottom with long or medium infrared rays
(2) Complete the infrared ray reflow process within 30 to 50 seconds when a package surface temperature is 230°C
or higher. The maximum package surface temperature should be kept below 260°C.
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CMF05
(3) Figure 2 shows an example of temperature profile.
Package surface temperature
(°C)
260
230
190
180
60 to120 s
30 to 50 s
Time (in seconds)
(s)
Figure 2 Example of Temperature Profile
This profile is based on the device’s maximum guaranteed heat resistance.
Optimize the preheat and heating temperatures according to the type of solder paste used. The above profile
should be not exceeded.
(4) Using Hot Air Reflow Soldering
(1) Complete hot air reflow process within 30 to 50 seconds when a package surface temperature is 230°C or
higher. The maximum package surface temperature should be kept below 260°C.
(2) Figure 2 shows an example of temperature profile.
(5) Using Flow or Dip Soldering
(1) Preheat the devices for 60 to 120 seconds at a temperature of 150°C.
(2) Complete soldering within ten seconds below 260°C. Flow or dip soldering is permitted at most once.
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2010-02-17
CMF05
i
F
– v
F
10
1.6
Pulse test
P
F (AV)
– I
F (AV)
i
F
(A)
Average forward power dissipation
P
F (AV)
(W)
Instantaneous forward current
Tj
=
125°C
1
75°C
1.2
120°
0.8
180°
α =
60°
Rectangular
waveform
0.1
25°C
0.4
0°
α
360°
Conduction
angle:
α
0.01
0
1.0
2.0
3.0
4.0
5.0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Instantaneous forward voltage VF
(V)
Average forward current
I
F (AV)
(A)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)
140
Ta max – I
F (AV)
T
ℓ
max – I
F (AV)
140
Rectangular
waveform
Maximum allowable ambient temperature
Ta max (°C)
Maximum allowable lead temperature
T
ℓ
max (°C)
Rectangular
waveform
120
100
0°
α
360°
Conduction
angle:
α
120
100
80
60
40
20
0
0
0°
α
360°
Conduction
angle:
α
80
60
40
20
0
0
120°
α =
60°
0.1
0.2
0.3
180°
0.4
0.5
0.6
0.7
0.8
α =
60°
0.1
0.2
0.3
0.4
120°
180°
0.6
0.7
0.8
0.5
Average forward current
I
F (AV)
(A)
Average forward current
I
F (AV)
(A)
Surge forward current
(non-repetitive)
12
1000
Ta
=
25°C
f
=
50 Hz
r
th (j-a)
– t
Device mounted on
a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 2.1 mm × 1.4 mm,
board thickness: 0.64 mm)
I
FSM
(A)
Peak surge forward current
8
Transient thermal impedance
r
th (j-a)
(°C/W)
10
100
Device mounted on
a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 6.0 mm × 6.0 mm,
board thickness: 1.6 mm)
Device mounted on a ceramic board
(board size: 50 mm × 50 mm,
land size: 2.0 mm × 2.0 mm,
board thickness: 0.64 mm)
1
0.001
0.01
0.1
1
10
100
1000
6
4
10
2
0
1
3
10
30
50
100
Number of cycles
Time t (s)
5
2010-02-17
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