IS61LF25632D-10TQ datasheet, PDF

IS61LF25632D-10TQ: DescriptionCache SRAM, 256KX32, 10ns, CMOS, PQFP100, TQFP-100; Categorystorage storage; File Size146KB，21 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS61LF25632D-10TQ Overview

Cache SRAM, 256KX32, 10ns, CMOS, PQFP100, TQFP-100

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	QFP
package instruction	TQFP-100
Contacts	100
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	10 ns
Other features	FLOW-THROUGH ARCHITECTURE
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	8388608 bit
Memory IC Type	CACHE SRAM
memory width	32
Number of functions	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	2.5/3.3,3.3 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.03 A
Minimum standby current	3.14 V
Maximum slew rate	0.3 mA
Maximum supply voltage (Vsup)	3.63 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	14 mm

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