DD800S17K3B2NOSA1 datasheet, PDF

DD800S17K3B2NOSA1: DescriptionRectifier Diode, 1 Phase, 2 Element, 800A, 1700V V(RRM), Silicon, MODULE-4; CategoryDiscrete semiconductor diode; File Size445KB，5 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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DD800S17K3B2NOSA1 Overview

Rectifier Diode, 1 Phase, 2 Element, 800A, 1700V V(RRM), Silicon, MODULE-4

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	MODULE-4
Reach Compliance Code	unknown
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SEPARATE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2.2 V
JESD-30 code	R-XUFM-X4
Number of components	2
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Maximum output current	800 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	1700 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED

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