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BZT52H-B39

Description
3.6 V, 0.375 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size103KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BZT52H-B39 Overview

3.6 V, 0.375 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT52H-B39 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Rated working voltage3.6 V
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingTIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipZENER
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.3750 W
polarityUNIDIRECTIONAL
Diode typeVOLTAGE REGULATOR DIODE
Working test current5 mA
Maximum total reference voltage1.94 %

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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