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M350S0823CT1-C1H

Description
Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168
Categorystorage    storage   
File Size168KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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M350S0823CT1-C1H Overview

Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168

M350S0823CT1-C1H Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density603979776 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals168
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)225
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.01 A
Maximum slew rate1.126 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

M350S0823CT1-C1H Related Products

M350S0823CT1-C1H M350S0823CT1-C1L M350S0823CT1-C80
Description Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168 Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168
Is it Rohs certified? incompatible incompatible incompatible
Maker SAMSUNG SAMSUNG SAMSUNG
Parts packaging code DIMM DIMM DIMM
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Contacts 168 168 168
Reach Compliance Code compliant compliant compli
ECCN code EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6 ns 6 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 100 MHz 100 MHz 125 MHz
I/O type COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 603979776 bit 603979776 bit 603979776 bi
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 72 72 72
Humidity sensitivity level 1 1 1
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 168 168 168
word count 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 8MX72 8MX72 8MX72
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 225 225 225
power supply 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096
self refresh YES YES YES
Maximum standby current 0.01 A 0.01 A 0.01 A
Maximum slew rate 1.126 mA 1.126 mA 1.126 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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