Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-220AB,
Parameter Name | Attribute value |
Maker | Taiwan Semiconductor |
package instruction | R-PSFM-T3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Other features | LOW POWER LOSS |
application | EFFICIENCY |
Shell connection | CATHODE |
Configuration | COMMON CATHODE, 2 ELEMENTS |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 0.92 V |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Maximum non-repetitive peak forward current | 200 A |
Number of components | 2 |
Phase | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Maximum output current | 15 A |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Maximum repetitive peak reverse voltage | 150 V |
Maximum reverse current | 100 µA |
surface mount | NO |
technology | SCHOTTKY |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
TST30L150CWMC0G | TST30L200CWMC0G | TST30L100CWMC0G | |
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Description | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-220AB, | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-220AB, | Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-220AB, |
Reach Compliance Code | compliant | compliant | compli |
ECCN code | EAR99 | EAR99 | EAR99 |
Other features | LOW POWER LOSS | LOW POWER LOSS | LOW POWER LOSS |
application | EFFICIENCY | EFFICIENCY | EFFICIENCY |
Shell connection | CATHODE | CATHODE | CATHODE |
Configuration | COMMON CATHODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS |
Diode component materials | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 0.92 V | 0.96 V | 0.82 V |
JEDEC-95 code | TO-220AB | TO-220AB | TO-220AB |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
Maximum non-repetitive peak forward current | 200 A | 200 A | 200 A |
Number of components | 2 | 2 | 2 |
Phase | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C |
Minimum operating temperature | -55 °C | -55 °C | -55 °C |
Maximum output current | 15 A | 15 A | 15 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Maximum repetitive peak reverse voltage | 150 V | 200 V | 100 V |
Maximum reverse current | 100 µA | 100 µA | 200 µA |
surface mount | NO | NO | NO |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE |
Maker | Taiwan Semiconductor | - | Taiwan Semiconductor |
package instruction | R-PSFM-T3 | R-PSFM-T3 | - |