VG36643211BT-8 datasheet, PDF - EEWORLD Datasheet

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VG36643211BT-8: DescriptionSynchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86; Categorystorage storage; File Size1MB，72 Pages; ManufacturerVanguard International Semiconductor Corporation; Websitehttp://www.vis.com.tw/

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VG36643211BT-8 Overview

Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86

VG36643211BT-8 Parametric

Parameter Name	Attribute value
Maker	Vanguard International Semiconductor Corporation
Parts packaging code	TSOP
package instruction	TSOP2,
Contacts	86
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G86
length	22.22 mm
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	86
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX32
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	10.16 mm

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Description

Preliminary

VG3664321(4)1(2)BT

CMOS Synchronous Dynamic RAM

The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 -

bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced

submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is

packaged in JEDEC standard pinout and standard plastic TSOP package.

Features

• Single 3.3V (

0.3V ) power supply

• High speed clock cycle time : 8/10 for LVTTL

• High speed clock cycle time : 8/10 for SSTL - 3

• Fully synchronous with all signals referenced to a positive clock edge

• Programmable CAS Iatency (2,3)

• Programmable burst length (1,2,4,8,& Full page)

• Programmable wrap sequence (Sequential/Interleave)

• Automatic precharge and controlled precharge

• Auto refresh and self refresh modes

• Dual Internal banks controlled by A11 (Bank select) for VG36643211(2)

• Quad Internal banks controlled by A11 & A12 (Bank select) for VG36643241(2)

• Each Banks can operate simultaneously and independently

• LVTTL compatible I/O interface for VG36643211 and VG36643241

• SSTL - 3 compatible I/O interface for VG36643212 and VG36643242

• Random column access in every cycle

• x32 organization

• Input/Output controlled by DQM0 ~ 3

• 4,096 refresh cycles/64ms

• Burst termination by burst stop and precharge command

• Burst read/single write option

Document : 1G5-0099

Rev.1

Page 1

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Description	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86	Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86
Parts packaging code	TSOP	TSOP	TSOP	TSOP	TSOP	TSOP	TSOP	TSOP	TSOP
package instruction	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,
Contacts	86	86	86	86	86	86	86	86	86
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86	R-PDSO-G86
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	32	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	86	86	86	86	86	86	86	86	86
word count	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32	2MX32
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Maker	Vanguard International Semiconductor Corporation	-	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation

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