90A, 100V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Rochester Electronics |
| Parts packaging code | TO-220AB |
| package instruction | TO-220, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 2430 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 90 A |
| Maximum drain-source on-resistance | 0.01 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | NOT APPLICABLE |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT APPLICABLE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 360 A |
| Certification status | COMMERCIAL |
| surface mount | NO |
| Terminal surface | MATTE TIN |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT APPLICABLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| FQP90N10V2 | FQPF90N10V2 | |
|---|---|---|
| Description | 90A, 100V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | 90A, 100V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN |
| Is it lead-free? | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to |
| Maker | Rochester Electronics | Rochester Electronics |
| Parts packaging code | TO-220AB | TO-220AB |
| package instruction | TO-220, 3 PIN | TO-220F, 3 PIN |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 2430 mJ | 2430 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V |
| Maximum drain current (ID) | 90 A | 90 A |
| Maximum drain-source on-resistance | 0.01 Ω | 0.01 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | NOT APPLICABLE | NOT APPLICABLE |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT APPLICABLE | NOT APPLICABLE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 360 A | 360 A |
| Certification status | COMMERCIAL | COMMERCIAL |
| surface mount | NO | NO |
| Terminal surface | MATTE TIN | MATTE TIN |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT APPLICABLE | NOT APPLICABLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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