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WME128K8-200DECE

Description
EEPROM, 128KX8, 200ns, Parallel, CMOS, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32
Categorystorage    storage   
File Size253KB,11 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

WME128K8-200DECE Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32

WME128K8-200DECE Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1820321856
Parts packaging codeSOJ
package instructionSOJ,
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time200 ns
Other featuresWRITE ENDURANCE 10000 CYCLES; 10 YEARS DATA RETENTION; HARDWARE AND SOFTWARE DATA PROTECTION
Data retention time - minimum10
Durability10000 Write/Erase Cycles
JESD-30 codeR-CDSO-J32
JESD-609 codee4
memory density1048576 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height3.96 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGOLD
Terminal formJ BEND
Terminal locationDUAL
width11.23 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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