SSG4435
Elektronische Bauelemente
-8A, -30V, R
DS(ON)
20m
P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4435 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOP-8 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
SOP-8
B
L
D
M
FEATURES
A
C
N
J
K
Low on-resistance
Simple Drive Requirement
Fast switching
H
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
F
E
REF.
REF.
H
J
K
L
M
N
MARKING
4435SC
½
= Date Code
A
B
C
D
E
F
G
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
PACKAGE INFORMATION
Package
SOP-8
MPQ
3K
LeaderSize
13’ inch
S
S
S
G
D
D
D
D
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Pulsed Drain Current
1.2
Power Dissipation
Maximum Junction to Ambient
3
Linear Derating Factor
Operating Junction & Storage Temperature Range
T
J
, T
STG
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
Ratings
-30
±20
-8
-6
-50
2.5
50
0.02
-55~150
Unit
V
V
A
A
W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Mar-2011 Rev. B
Page 1 of 4
SSG4435
Elektronische Bauelemente
-8A, -30V, R
DS(ON)
20m
P-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
j
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp.
Coefficient
Gate-Threshold Voltage
Forward Transfer Conductance
Gate-Body Leakage
Zero Gate Voltage Drain
Current
T
A
= 25°C
T
A
= 70°C
Symbol
BV
DSS
△
BV
DS
/
△
T
j
V
GS(th)
G
fs
I
GSS
I
DSS
Min.
-30
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Static
-
-0.037
-
20
-
-
-
-
-
12.4
3.4
5.1
24.2
23.8
58.2
9
1345
194
158
Max.
-
-
-3
-
±100
-1
-5
20
35
-
-
-
-
-
-
-
-
-
-
Unit
V
V / °C
V
S
nA
μA
μA
mΩ
Test condition
V
GS
=0, I
D
=-250μA
Reference to 25°C, I
D
= -1mA
V
DS
=V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -8A
V
GS
=±20V
V
DS
= -30V, V
GS
=0
V
DS
= -24V, V
GS
=0
V
GS
= -10V, I
D
= -8A
V
GS
= -4.5V, I
D
= -5A
I
D
= -12A
V
DS
= -20V
V
GS
= -4.5V
Drain-Source On-Resistance
2
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
2
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
nS
V
DS
= -15V
I
D
= -1A
V
GS
= -10V
R
G
=3.3Ω
pF
V
GS
=0
V
DS
= -15V
f=1.0MHz
Source-Drain Diode
Forward On Voltage
2
Continuous Source Current
(Body Diode)
Pulsed Source Current
1
(Body Diode)
V
DS
I
s
I
SM
-
-
-
-0.75
-
-
-1.2
-2.1
-50
V
A
A
I
S
= -2.1A, V
GS
=0, T
j
=25°C
V
D=
V
G=
0V, V
S
= -1.2V
Notes:
1 Pulse width limited by Max. junction temperature.
2 Pulse width≦300us, duty cycle≦2%.
2
3 Surface mounted on 1 in copper pad of FR4 board; 125°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Mar-2011 Rev. B
Page 2 of 4
SSG4435
Elektronische Bauelemente
-8A, -30V, R
DS(ON)
20m
P-Channel Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Mar-2011 Rev. B
Page 3 of 4
SSG4435
Elektronische Bauelemente
-8A, -30V, R
DS(ON)
20m
P-Channel Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Mar-2011 Rev. B
Page 4 of 4
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