SM2060D-C datasheet, PDF - EEWORLD Datasheet

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SM2060D-C: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2; CategoryDiscrete semiconductor diode; File Size293KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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SM2060D-C Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2

SM2060D-C Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	R-PSSO-G2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.68 V
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	200 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	60 V
Maximum reverse current	150 µA
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE

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SM2020D~SM20100D

Elektronische Bauelemente

Voltage 20V~ 100V

20.0 Amp Schottky Barrier Rectifiers

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



TO-263(D

2

-PACK)

Low forward voltage drop

High current capability

High reliability

High surge current capability

Epitaxial construction

A

C

D

MECHANICAL DATA



Case: Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

Polarity: Color band denotes cathode end

Mounting position: Any

Weight: 1.6 grams

GE

O

K

HF

L

J

N

P

M

REF.

PACKAGE INFORMATION

Package

TO-263

MPQ

0.8K

Leader Size

13 inch

A

C

D

E

F

G

Millimeter

Min.

Max.

9.50

10.50

4.30

4.80

1.17

1.45

9.50

10.50

4.33

5.93

8.50

9.00

REF.

H

J

K

L

M

P

Millimeter

Min.

Max.

1.50 REF.

2.54 TYP.

-

0.71

1.00

1.17

1.47

0.31

0.53

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Parameter

Maximum Repetitive Peak Reverse

Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current

Peak Forward Surge Current, 8.3 ms

single half sine-wave superimposed

on rated load

Maximum Instantaneous Forward

Voltage @ 10A

Maximum Reverse

T

A

=25°C

Current at Rated VR Per

T

A

=100°C

Diode

Typical Junction Capacitance

1

Typical Thermal Resistance

2

Operating & Storage Temperature

Symbol

SM2020D

V

RRM

V

RMS

V

DC

I

F

I

FSM

V

F

I

R

C

J

R

θJc

T

J

,T

STG

0.57

0.3

45

700

20

Part Number

SM2040D

40

20

200

0.68

0.15

22.5

460

3

-55~150, -65~175

0.85

0.1

7.5

280

SM2060D

60

SM20100D

100

Unit

V

A

V

mA

pF

°C / W

°C

Notes:

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance Junction to Case.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

02-Mar-2012 Rev. D

Page 1 of 2

SM2060D-C Related Products

	SM2060D-C	SM20100D-C	SM2020D-C	SM2040D-C
Description	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 20V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2
Maker	SECOS	SECOS	SECOS	SECOS
package instruction	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Reach Compliance Code	compliant	compliant	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	CATHODE	CATHODE	CATHODE	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.68 V	0.85 V	0.57 V	0.57 V
JEDEC-95 code	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Maximum non-repetitive peak forward current	200 A	200 A	200 A	200 A
Number of components	2	2	2	2
Phase	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	10 A	10 A	10 A	10 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	60 V	100 V	20 V	40 V
Maximum reverse current	150 µA	100 µA	300 µA	300 µA
surface mount	YES	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE

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