This product has been retired and is not recommended for designs. For new and current designs, S29AL008J supercedes
Am29LV081B. This is the factory-recommended migration path. Please refer to the S29AL008J data sheet for specifications
and ordering information. Availability of this document is retained for reference and historical purposes only.
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
21525
Revision
D
Amendment
7
Issue Date
February 24, 2009
Da ta
Shee t
(Retire d
Pro duct)
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2
Am29LV081B
21525_D7 February 24, 2009
DATA SHEET
Am29LV081B
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
This product has been retired and is not recommended for designs. For new and current designs, S29AL008J supercedes Am29LV081B. This is the factory-recommended migration path.
Please refer to the S29AL008J data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
■
Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29LV081 device
■
High performance
— Access times as fast as 70 ns
■
Ultra low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■
Flexible sector architecture
— Sixteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■
Minimum 1,000,000 write cycle guarantee
per sector
■
20-year data retention at 125°C
— Reliable operation for the life of the system
■
Package option
— 40-pin TSOP
■
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
■
Command sequence optimized for mass storage
— Specific addresses not required for unlock cycles
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21525
Rev:
D
Amendment:
7
Issue Date:
February 24, 2009
DATA SHEET
GENERAL DESCRIPTION
The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash
memory organized as 1,048,576 bytes. The device is
offered in a 40-pin TSOP package. The byte-wide (x8)
data appears on DQ7–DQ0. This device requires only
a single, 3.0 volt V
CC
supply to perform read, program,
and erase operations. A standard EPROM programmer
can also be used to program and erase the device.
This device is manufactured using AMD’s 0.32 µm
process technology, and offers all the features and ben-
efits of the Am29LV081, which was manufactured using
0 . 5 µ m p r o c e s s t e c h n o l o gy. I n a d d i t i o n , t h e
Am29LV081B features unlock bypass programming
and in-system sector protection/unprotection.
The standard device offers access times of 70, 90, and
120 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention
the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard.
Com-
mands are written to the command register using stan-