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T17F11BDM

Description
Silicon Controlled Rectifier, 35A I(T)RMS, 17000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size46KB,1 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

T17F11BDM Overview

Silicon Controlled Rectifier, 35A I(T)RMS, 17000mA I(T), 1100V V(DRM), 1100V V(RRM), 1 Element,

T17F11BDM Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknown
Other featuresFAST
Shell connectionANODE
Nominal circuit commutation break time15 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current200 mA
JESD-30 codeO-MUPM-H2
Maximum leakage current8 mA
On-state non-repetitive peak current390 A
Number of components1
Number of terminals2
Maximum on-state current17000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum rms on-state current35 A
Off-state repetitive peak voltage1100 V
Repeated peak reverse voltage1100 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Trigger device typeSCR
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