Standard SRAM, 256KX4, 25ns, CMOS, PDIP28, 0.400 INCH, PLASTIC, DIP-28
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Micron Technology |
Parts packaging code | DIP |
package instruction | 0.400 INCH, PLASTIC, DIP-28 |
Contacts | 28 |
Reach Compliance Code | not_compliant |
ECCN code | 3A001.A.2.C |
Maximum access time | 25 ns |
I/O type | COMMON |
JESD-30 code | R-PDIP-T28 |
JESD-609 code | e0 |
length | 35.05 mm |
memory density | 1048576 bit |
Memory IC Type | STANDARD SRAM |
memory width | 4 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 28 |
word count | 262144 words |
character code | 256000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 256KX4 |
Output characteristics | 3-STATE |
Exportable | YES |
Package body material | PLASTIC/EPOXY |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.4 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 3.3 V |
Certification status | Not Qualified |
Maximum seat height | 4.32 mm |
Maximum standby current | 0.00005 A |
Minimum standby current | 2 V |
Maximum slew rate | 0.045 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 10.16 mm |