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NN514256T-70

Description
Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20
Categorystorage    storage   
File Size746KB,17 Pages
ManufacturerUnited Microelectronics Corporation
Websitehttp://www.umc.com/
Download Datasheet Parametric View All

NN514256T-70 Overview

Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20

NN514256T-70 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerUnited Microelectronics Corporation
package instructionTSSOP, TSSOP20/24,.63,20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G20
JESD-609 codee0
memory density1048576 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP20/24,.63,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum standby current0.001 A
Maximum slew rate0.07 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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