White Electronic Designs
Medical Series CompactFlash® Card
FEATURES
Storage Capacities:
•
128MB, 256MB, 512MB,1GB, 2GB, 4GB and
8GB
Environment conditions:
•
Operating temperature: -40°C to 85°C
•
Storage temperature: -55°C to 125°C
CompactFlash
®
Compatibility
•
CFA standard 2.1 compliant
•
3.3V or 5.0V single power supply
•
50 pin connector with Type-I form factor (3.3mm
thickness)
•
256 Bytes of attribute memory
Power consumption
•
5V operation
Active mode:
Write operation: 28 mA (Typ.), 30 mA (Max.)
Read operation: 23 mA (Typ.), 30 mA (Max.)
Sleep mode: 2.0mA (max.)
•
3.3V operation
Active mode:
Write operation: 28 mA (Typ.), 30 mA (Max.)
Read operation: 23 mA (Typ.), 30 mA (Max.)
Sleep mode: 2.0mA (max.
RoHS compliant
Interface modes
•
PC card memory mode
•
PC card I/O mode
•
True IDE mode
Less than 1 Error in 10
14
bits read
MTBF > 4,000,000 hours
High shock & vibration tolerance
W/E Endurance: 4,000,000 write/erase cycles
High performance
•
Interface Transfer speed in PIO mode 4 or Multi
Word DMA mode 2 cycle timing; up to 16.7
MB/second (PIO mode 3 & 4 are available in
IDE mode only).
•
Typical write: 5.0 MBytes/s in ATA PIO mode 4
•
Typical read: 7.0 MBytes/s in ATA PIO mode 4
•
On card ECC up to 6 Bytes per 512 Byte data
March 2007
Rev. 2
1
W7NCF-H-M1 Series
2
GB
4
GB
Dimensions:
•
Type I card : 36.4mm(L) x 42.8mm(W) x
3.3mm(H)
Highly resistant to data corruption due to power loss
or card removal
DESCRIPTION
The W7NCF-H-M1 series CompactFlash® family is
designed for high reliability and robust operation. This
product not only offers a strictly controlled and locked bill
of materials but also the robust operation which is desired
in many medical applications. The product’s reliability
backbone is established by using a 32 bit RISC based
controller along with the best SLC (single level cell) NAND
flash memory devices. Utilizing proprietary techniques, our
card offers both firmware and hardware features which
mitigate problems relating to power disturbances and
interruptions. Implemented is the industry leading ECC
protection which is capable of correcting 6 bytes in every
512 byte sector. This leading ECC protection combined
with patented static wear leveling technology provides the
highest read/write endurance possible.
CompactFlash® is a trademark of SanDisk Corporation and is licensed royalty-free to the
CFA, which in turn will license it royalty-free to CFA members.
CFA: CompactFlash
®
Association.
sector
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
Item
Temperature Cycle
Humidity
Vibration
Shock
Altitude
W7NCF-H-M1 Series
ENVIRONMENTAL CHARACTERIZATION
Performance
JEDEC - JESD STD A104 Temp condition N (-40°C to 85 °C) and soak mode 3; 200 cycles
MIL-STD 810F, Method 507.4, Paragraph 4.5.2 - 10 day test per
fi
gure 507.4-1, 10 day test
MIL-STD 810F, Method 514.5, procedure 1, category 24, 1 hour per axis
MIL-STD 810F, Method 516.5, procedure1, non-operational, 40g, SRS functional shock for ground equipment, three (3)
shock per axis (positive or negative).
JEDEC- JESD22-B, 104-A, test condition B,1500 g pulse, 0.5 msec
MIL-STD 810F, Method 500.4, procedure II, modified to 80,000 ft and non operation 1 hr test duration at altitude
PRODUCT RELIABILITY
Item
MTBF (@ 25°C)
Data reliability
Endurance
Value
> 4,000,000 Hours
< 1 Non-Recoverable Error in 10
14
Bits Read
> 4,000,000 write/erase cycles
PRODUCT PERFORMANCE
Item
Read Transfer Rate (Typical)
Write Transfer Rate (Typical)
Burst Transfer Rate
Controller Overhead
(Command to DRQ)
Performance (PIO mode 4 true IDE)
7MB/s
5MB/s
up to 16.7MB/s
1ms typical, 5ms (max)
March 2007
Rev. 2
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IL
V
IH
V
OL
V
OH
I
CC
Parameter
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Operating Current, V
CC_R=5.0V
Sleep Mode
Operating, 20 MHz
Operating Current, V
CC_R=3.3V
Sleep Mode
Operating, 20 MHz
Input Leakage Current
Output Leakage Current
Min
-0.3
2.0
2.4
0.2
30
0.2
30
±10
±10
W7NCF-H-M1 Series
Max
+0.8
VCC+0.3
0.45
Units
V
V
V
V
mA
mA
mA
mA
μA
μA
Notes
at 4mA
at 4mA
I
CC
I
LI
I
LO
Attribute Memory Read and Write AC Characteristics
V
CC
= 5V ± 0.5V, 3.3 V ±0.3V
Symbol
t
cR
t
a(A)
t
a(CE)
t
a(OE)
t
dis(CE)
t
dis(OE)
t
en(CE)
t
en(OE)
t
V(A)
t
su(A)
t
h(A)
t
su(CE)
t
h(CE)
t
cW
t
w(WE)
t
su(A-WEH)
t
su(CE-WEH)
t
su(D-WEH)
t
h(D)
t
dis(WE)
t
en(WE)
t
su(OE-WE)
t
h(OE-WE)
Parameter
Read Cycle Time
Address Access Time
Card Enable Access Time
Output Enable Access Time
Output Disable time from CE
Output Disable time from OE
Output Enable time from CE
Output Enable time from OE
Data valid time from address change
Address Setup Time
Address Hold Time
Card Enable Setup Time
Card Enable Hold Time
Write Cycle Time
Write Pulse TIme
Address setup time for WE
Card Enable setup time for WE
Data setup time for WE
Data hold time
Output disable time from WE
Output enable time from WE
Output Enable setup time for WE
Output Enable hold time from WE
Min
250
Max
250
250
125
100
100
5
5
0
30
20
2
20
250
150
180
180
80
30
5
10
10
100
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
March 2007
Rev. 2
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
Symbol
t
cR
t
a(A)
t
a(CE)
t
a(OE)
t
dis(CE)
t
dis(OE)
t
en(CE)
t
en(OE)
t
V(A)
t
su(A)
t
h(A)
t
su(CE)
t
h(CE)
t
cW
t
w(WE)
t
su(A-WEH)
t
su(CE-WEH)
t
su(D-WEH)
t
h(D)
t
rec(WE)
t
dis(WE)
t
en(WE)
t
su(OE-WE)
t
h(OE-WE)
Parameter
Read Cycle Time
Address Access Time
Card Enable Access Time
Output Enable Access Time
Output Disable time from CE
Output Disable time from OE
Output Enable time from CE
Output Enable time from OE
Data valid time from address change
Address Setup Time
Address Hold Time
Card Enable Setup Time
Card Enable Hold Time
Write Cycle Time
Write Pulse TIme
Address setup time for WE
Card Enable setup time for WE
Data setup time for WE
Data hold time
Output disable time from WE
Output enable time from WE
Output Enable setup time for WE
Output Enable hold time from WE
Min
150
W7NCF-H-M1 Series
Common Memory Read and Write AC Charateristics
Max
150
150
75
75
75
5
5
0
20
20
0
20
150
80
100
100
50
20
20
5
10
10
75
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
March 2007
Rev. 2
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
Symbol
t
d(IORD)
t
h(IORD)
t
w(IORD)
t
suA(IORD)
t
hA(IORD)
t
suCE(IORD)
t
hCE(IORD)
t
suREG(IORD)
t
hREG(IORD)
t
dflNP(IORD)
t
drlNP(IORD)
t
dflO16(IORD)
t
drlO16(IORD)
t
su(IOWR)
t
h(IOWR)
t
w(IOWR)
t
suA(IOWR)
t
hA(IOWR)
t
suCE(IOWR)
t
hCE(IOWR)
t
suREG(IOWR)
t
hREG(IOWR)
Parameter
Data Delay after IORD
Data Hold following IORD
IORD pulse width
Address setup time for IORD
Address hold time for IORD
Card Enable setup time for IORD
Card Enable hold time from IORD
REG setup time for IORD
REG Hold time from IORD
INPACK delay falling from IORD
INPACK delay rising from IORD
IOIS16 delay falling from address
IOIS16 delay rising from address
Data setup time for IOWR
Data hold time from IOWR
IOWR pulse width
Address setup time for IOWR
Address hold time from IOWR
Card Enable setup time fro IOWR
Card Enable hold time from IOWR
REG setup time for IOWR
REG hold tme from IOWR
Min
0
165
70
20
5
20
5
0
0
W7NCF-H-M1 Series
I/O Access Read and Write AC Characteristic
Max
100
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
45
45
35
35
60
30
165
70
20
5
20
5
0
True-IDE Mode I/O Access Read and Write AC Characteristics
Symbol
t
cR
t
suA
t
hA
t
w
t
rec
t
suD(IORD)
t
hD(IORD)
t
dis(IORD)
t
suD(IOWR)
t
hD(IOWR)
Parameter
Cycle time
Address setup time for IORD/IOWR
Address hold time from IORD/IOWR
IORD/IORW pulse width
IORD/IORW recovery time
Data setup time for IORD
Data hold time for IORD
Output disable time from IORD
Data setup time for IOWR
Data hold following IOWR
Min
120
25
10
70
25
20
5
20
10
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
30
March 2007
Rev. 2
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Special Edition for Assessment Centres
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