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MT46V32M8FG-6T:F

Description
DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, (8 X 14) MM, PLASTIC, FBGA-60
Categorystorage    storage   
File Size4MB,93 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT46V32M8FG-6T:F Overview

DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60, (8 X 14) MM, PLASTIC, FBGA-60

MT46V32M8FG-6T:F Parametric

Parameter NameAttribute value
MakerMicron Technology
Parts packaging codeBGA
package instructionTBGA,
Contacts60
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B60
length14 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width8 mm
256Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR400)
• Bidirectional data strobe (DQS) transmitted/
received with data, that is, source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths (BL): 2, 4, or 8
• Auto refresh
64ms, 8192-cycle(Commercial & Industrial)
16ms, 8192-cycle (Automotive)
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2-compatible)
• Concurrent auto precharge option supported
t
RAS lockout supported (
t
RAP =
t
RCD)
Options
Marking
• Configuration
64 Meg x 4 (16 Meg x 4 x 4 banks)
64M4
32 Meg x 8 (8 Meg x 8 x 4 banks)
32M8
16 Meg x 16 (4 Meg x 16 x 4 banks)
16M16
• Plastic package – OCPL
66-pin TSOP
TG
66-pin TSOP (Pb-free)
P
• Plastic package
FG
1
60-ball FBGA (8mm x 14mm)
BG
1
60-ball FBGA (8mm x 14mm) (Pb-free)
CV
2
60-ball FBGA (8mm x 12.5mm)
CY
2
60-ball FBGA (8mm x 12.5mm)
(Pb-free)
• Timing – cycle time
5ns @ CL = 3 (DDR400B)
-5B
6ns @ CL = 2.5 (DDR333) FBGA only
-6
6ns @ CL = 2.5 (DDR333) TSOP only
-6T
-75E
1
7.5ns @ CL = 2 (DDR266)
-75Z
1
7.5ns @ CL = 2 (DDR266A)
-75
1
7.5ns @ CL = 2.5 (DDR266B)
• Self refresh
Standard
None
Low-power self refresh
L
• Temperature rating
Commercial (0°C to +70°C)
None
Industrial (–40°C to +85°C)
IT
Automotive (–40°C to +105°C)
AT
4
• Revision
:G
3
x4, x8
:F
3
x16
x4, x8, x16
:K
Notes: 1. Only available on Revision F and G.
2. Only available on Revision K.
3. Not recommended for new designs.
4. Contact Micron for availability.
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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